Chemical Properties of Hexamethyldisilazane (CAS 999-97-3)

InChI

InChI=1S/C6H19NSi2/c1-8(2,3)7-9(4,5)6/h7H,1-6H3

InChI Key

FFUAGWLWBBFQJT-UHFFFAOYSA-N

Formula

C6H19NSi2

SMILES

C[Si](C)(C)N[Si](C)(C)C

Molecular Weight¹

161.39

CAS

999-97-3

Other Names

• ((CH3)3Si)2NH
• 1,1,1,3,3,3-hexamethyldisilazane
• 1,1,1-Trimethyl-N-(trimethylsilyl)silanamine
• HMDS
• HMDS (silazane)
• NSC 93895
• OAP
• SZ 6079
• Silanamine, 1,1,1-trimethyl-N-(trimethylsilyl)-
• TSL 8802
• Trimethyl-N-(trimethylsilyl)silanamine
• bis(trimethylsilyl)amine
• di(trimethylsilyl)amine
• disilazane, 1,1,1,3,3,3-hexamethyl-
• hexamethyldisilylamine

• Δ_vapH° : Enthalpy of vaporization at standard conditions (kJ/mol).
• Δ_vapH : Enthalpy of vaporization at a given temperature (kJ/mol).
• IE : Ionization energy (eV).
• logP_oct/wat : Octanol/Water partition coefficient.
• P_vap : Vapor pressure (kPa).
• I_np : Non-polar retention indices.
• T_boil : Normal Boiling Point Temperature (K).
• T_boil : Boiling point at given pressure (K).
• ¹: Molecular weight from the IUPAC atomic weights tables.

Physical Properties

Property	Value	Unit	Source
ΔvapH°	42.20 ± 0.90	kJ/mol	NIST
IE	[8.55; 8.79]	eV
IE	8.55	eV	NIST
IE	8.79 ± 0.05	eV	NIST
IE	8.66	eV	NIST
logPoct/wat	2.246		Crippen Calculated Property
Inp	[686.00; 717.00]
Inp	686.00		NIST
Inp	717.00		NIST
Inp	686.00		NIST
Tboil	[397.20; 399.00]	K
Tboil	399.00	K	NIST
Tboil	399.00	K	NIST
Tboil	397.20 ± 0.60	K	NIST

Cheméo can also estimate Normal melting (fusion) point, Critical Temperature, Critical Pressure, Critical Volume, Enthalpy of formation at standard conditions, Standard Gibbs free energy of formation, Acentric Factor, Log10 of Water solubility in mol/l for this compound, but they fall outside the models' validated range, so they are not shown here. Open the prediction tool to compute them on demand.

Temperature Dependent Properties

Property	Value	Unit	Temperature (K)	Source
ΔvapH	36.00	kJ/mol	344.50	NIST
Pvap	[1.51; 59.76]	kPa	[290.80; 382.20]
Pvap	1.51	kPa	290.80	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	1.54	kPa	290.90	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	1.68	kPa	292.00	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	1.73	kPa	293.50	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	2.71	kPa	301.10	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	2.68	kPa	301.50	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	4.25	kPa	311.40	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	4.36	kPa	312.40	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	5.93	kPa	320.20	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	6.60	kPa	321.20	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	9.72	kPa	329.70	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	10.21	kPa	330.90	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	10.30	kPa	331.80	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	14.79	kPa	340.10	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	15.35	kPa	341.10	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	20.68	kPa	349.80	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	23.41	kPa	352.70	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	30.30	kPa	360.30	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	31.34	kPa	360.50	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	42.85	kPa	370.00	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	45.32	kPa	371.80	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
Pvap	59.76	kPa	382.20	Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes

Pressure Dependent Properties

Similar Compounds

Find more compounds similar to Hexamethyldisilazane.

Sources

• Cheméo Relay (1.0, beta) Beta: served but experimental, data-limited and below our cross-validation release bar; the Joback value is recommended where available.
• Crippen Method
• Crippen Method
• Synthesis and characterization of organosilicon compounds as novel precursors for CVD processes
• Low cost apparatus for rapid boiling point determination of small air sensitive samples under inert atmosphere
• NIST Webbook

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